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Résumé |
In this seminar, I will present our recent discovery of mid-infrared
electroluminescence from graphene in high-mobility hBN-encapsulated transistors.
This phenomenon - a priori limited to semiconductors and alike - is made
possible by interband Zener-Klein tunneling and inefficient non-radiative
carrier relaxation. It leads to far-field emission at 6.5 µm and significantly
impacts energy transfer within the heterostructure. Our findings highlight the
crucial role of the electromagnetic environment on both energy transfer and far-
field electroluminescence and open up interesting technological possibilities. |
