Statut | Confirmé |
Série | LPENS-MDQ |
Domaines | cond-mat |
Date | Lundi 2 Décembre 2019 |
Heure | 13:30 |
Institut | LPENS |
Salle | Conf IV |
Nom de l'orateur | Gallais |
Prenom de l'orateur | Yann |
Addresse email de l'orateur | |
Institution de l'orateur | MPQ, Université Paris Diderot, Paris |
Titre | Electronic Raman scattering in graphene and transition metal dichalcogenides |
Résumé | In my talk I will review recent progress in the use of Raman scattering as a probe of electronic excitations in two-dimensional crystals. In the first part of my talk I will discuss experiments which aim at directly observing electronic excitations in graphene-based devices [1]. I will show in particular that symmetry-resolved Raman experiments can selectively probe chiral excitations, offering promising venues for this technique as a probe of non-trivial bulk and surface electron states. In the second part of my talk I will present recent Raman results on 2D metallic transition metal dichalcogenides (NbSe2 and TaSe2) in their bulk and few-layer form. I will discuss fingerprints of charge density wave order (CDW) and superconductivity (SC) and I will show that the coupling between CDW and SC orders enables a Raman coupling to the amplitude mode of the superconducting order parameter, a condensed matter analog of the Higgs mode [2]. If time allows I will also present recent THz Kerr and third-harmonic generation experiments which aim at probing the Higgs mode in other superconductors [3]. [1] E. Riccardi et al. Phys. Rev. Lett. 116, 066805 (2016), E. Riccardi et al. Phys. Rev. Mat. 3, 014002 (2019) [2] R. Grasset et al. Phys. Rev. B 97, 094502 (2018), R. Grasset et al. Phys. Rev. Lett. 122, 127001 (2019) [3] K. Katsumi et al. Phys. Rev. Lett. 120, 117001 (2018), H. Chu et al. arXiv : :1901.06675 (2019) |
Numéro de preprint arXiv | |
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