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Statut |
Confirmé |
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Série |
SEM-BESSON |
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Domaines |
cond-mat |
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Date |
Lundi 23 Juin 2008 |
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Heure |
10:00 |
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Institut |
IMPMC |
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Salle |
Salle de conference, batiment 15, 140 rue de Lourmel 75 015 PARIS |
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Nom de l'orateur |
Sood |
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Prenom de l'orateur |
A.k. |
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Addresse email de l'orateur |
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Institution de l'orateur |
Department of Physics, Indian Institute of Science,Bangalore, India. |
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Titre |
Top gated graphene transistor: raman scattering |
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Résumé |
Graphene, a two dimensional monolayer of Carbon atoms, is the most recent addition to the family of low-dimensional carbon, namely one-dimensional nanotubes and zero-dimensional fullerenes. After reviewing why graphene is so exciting, we will focus on our on-going work on single and bilayer graphene, with specific goals to understand phonons and Raman signatures of these systems. The controlled doping of graphene is achieved by electrochemical top gated field effect transistor using solid polymer electrolyte. In-situ studies of phonons in single and bilayer graphene as a function of doping provide us with a measure of electron-phonon coupling in these systems. The results are quantitatively explained using ab-initio calculations that take into account effects beyond adiabatic approximation. |
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Numéro de preprint arXiv |
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Commentaires |
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Fichiers attachés |
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