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Résumé |
I will present an approach [1] that allows the ab-initio calculation of shape, intensity and position of defect-activated (D, D', D'') and 2-phonon (D+D'', 2D, 2D') resonant Raman peaks in graphene. We also reproduce the weaker 2-phonon bands, that involve acustic branches and that have recently been measured in graphene. Our (parameter-free) simulated spectra closely reproduce the measured spectra and their evolution with the laser energy and defect concentration. The detailed description of the Raman process allows us to identify the most relevant phonons, scattering events, and defect types involved in each peak.
[1] P. Venezuela, M. Lazzeri, F. Mauri, to be published.
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